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| SI8435DB Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.041 at VGS = - 4.5 V - 20 0.048 at VGS = - 2.5 V 0.058 at VGS = - 1.8 V 0.075 at VGS = - 1.5 V ID (A)a - 10.0 - 9.32 22 nC - 8.48 - 7.45 Qg (Typ.) FEATURES * TrenchFET(R) Power MOSFET * Ultra Small MICRO FOOT(R) Chipscale Packaging Reduces Footprint Area, Profile COMPLIANT (0.62 mm) and On-Resistance Per Footprint Area RoHS APPLICATIONS * Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life MICRO FOOT Bump Side V iew 3 D D 2 Backside V iew G S 8435 XXX Device Marking: 8435 xxx = Date/Lot Traceability Code D P-Channel MOSFET S 4 G 1 Ordering Information: SI8435DB-T1-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS Limit - 20 5 - 10.0 - 8.06 - 6.72b,c - 5.37b,c - 15 - 5.21 - 2.31b,c 6.25 4.0 2.78b,c 1.78b,c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W TJ, Tstg IR/Convection Package Reflow Conditionsd Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. www..com e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump. Operating Junction and Storage Temperature Range C Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 1 SI8435DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a,b Symbol RthJA Steady State RthJF Typical 35 16 Maximum 45 20 Unit C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 72 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, Rg = 1 VGS = - 0.1 V, f = 1 MHz VDS = - 10 V, VGS = - 5 V, ID = - 1 A VDS = - 16 V, VGS = - 4.5 V, ID = - 1 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 1600 265 175 23 22 3.25 1.95 20 15 29 230 91 23 44 345 137 ns 35 33 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 5 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V , TJ = 70 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A RDS(on) VGS = - 2.5 V, ID = - 1 A VGS = - 1.8 V, ID = - 1 A VGS = - 1.5 V, ID = - 1 A gfs VDS = - 10 V, ID = - 1 A - 15 0.034 0.040 0.048 0.055 10.5 0.041 0.048 0.058 0.075 16 S - 0.35 - 20 - 15.5 2.5 - 1.0 100 -1 - 10 V mV/C V nA A A Symbol Test Conditions Min. Typ. Max. Unit www..com www.vishay.com 2 Document Number: 73559 S-82119-Rev. D, 08-Sep-08 SI8435DB Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics IS ISM VSD trr Qrr ta tb IF = - 1 A, dI/dt = 100 A/s, TJ = 25 C IS = - 1 A, VGS = 0 V 0.6 116 203 45 71 TC = 25 C - 5.21 - 15 1.2 174 305 V ns nC ns A Reverse Recovery Rise Time Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 15 VGS = 5 V thru 2 V 12 I D - Drain Current (A) TA = 25 C, unless otherwise noted 6 5 I D - Drain Current (A) 4 9 VGS = 1.5 V 6 3 2 3 VGS = 10 V 0 0.0 1 0 0.6 1.2 1.8 2.4 3.0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www..com Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 3 SI8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.12 1.6 ID = 1 A R DS(on) - D to S On-Resistance () 0.10 R DS(on) - On-Resistance (Normalized) 1.4 VGS = 4.5 V, 2.5 V 1.2 VGS = 1.8 V, 1.5 V 1.0 0.08 VGS = 1.5 V 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 0 3 6 9 12 15 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 ID - Drain Current (A) TJ - Junction T emperature (C) RDS(on) vs. Drain Current 2500 10 On-Resistance vs. Junction Temperature 2000 C - Capacitance (pF) C iss 1500 I S - Source Current (A) 1 TA = 150 C TA = 25 C 0.1 1000 500 Coss Crss 0 0 4 8 12 16 20 0.01 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Capacitance 5 ID = 1 A VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance () 4 VDS = 10 V 3 VDS = 16 V 2 0.10 0.12 Forward Diode Voltage vs. Temp. ID = 1 A 0.08 0.06 TA = 125 C 1 0.04 TA = 25 C 0.02 0 1 2 3 4 5 0 0 5 10 15 20 25 www..com Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Gate Charge RDS(on) vs. VGS vs Temperature www.vishay.com 4 Document Number: 73559 S-82119-Rev. D, 08-Sep-08 SI8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 - 50 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ - Temperature (C) TC - Case Temperature (C) I D - Drain Current (A) 8 VGS(th) (V) 12 4 Threshold Voltage 80 8 Current Derating** 60 Power (W) 6 Power (W) 40 4 20 2 0 0.001 0.01 0.1 Time (s) 1 10 0 0 25 50 75 100 125 150 Case Temperature ( C) Single Pulse Power, Juncion-to-Ambient 100 Limited by R DSon* 10 I D - Drain Current (A) IDM Limited P (t) = 10 ms P (t) = 100 ms 1 P (t) = 1 s P (t) = 10 s 0.1 DC Power Derating 0.01 TA = 25 C Single Pulse BVDSS Limited ** The power dissipation PD is based on TJ(max) = 150 C, using junction-to-foot thermal resistance, and is more useful in settling the 100 0.001 0.1 1 10 VDS - Drain-to-Source Voltage (V) upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www..com * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 5 SI8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 72 C/W 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www..com www.vishay.com 6 Document Number: 73559 S-82119-Rev. D, 08-Sep-08 SI8435DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.8 mm PITCH) 4 x 0.30 ~ 0.31 Note 3 Solder Mask ~ 0.40 e A2 A A1 Bump Note 2 b Diameter e Recommended Land S Silicon E e 8435 XXX e D Mark on Backside of Die S Notes (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Sn/Ag/Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. Millimetersa Min. 0.600 0.260 0.340 0.370 1.520 1.520 0.750 0.370 Max. 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Min. 0.0236 0.0102 0.0134 0.0146 0.0598 0.0598 0.0295 0.0146 Dim. A A1 A2 b D E e S Inches Max. 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 Notes: a. Use millimeters as the primary measurement. www..com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73559. Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. www..com Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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